Determination of Activated Dopant Profiles with a Novel FastGate® Probe

A novel technique has been developed that can provide activated dopant profiling of USJ structures without complicated Poisson based corrections. The technique has been demonstrated on USJ layers as thin as 25 nm. The value of this measurement technique is that it removes any consideration of mobility variation and allows one to focus on the electrically activated dopant. As the shape of the profile can affect device performance, this measurement will allow for optimal process development.